creat by art - low power loss, high efficiency - guardring for overvoltage protection - high surge current capability - halogen-free according to iec 61249-2-21 definition molding compound, ul flammability classification rating 94v-0 base p/n with suffix "g" on packing code - halogen-free base p/n with prefix "h" on packing code - aec-q101 qualified terminal: matte tin plated leads, solderable per jesd22-b102 meet jesd 201 class 1a whisker test, with prefix "h" on packing code meet jesd 201 class 2 whisker test v rrm 35 45 50 60 90 100 150 v v rms 24 31 35 42 63 70 105 v v dc 35 45 50 60 90 100 150 v i f(av) a i rrm a 0.95 0.92 - - dv/dt v/ s r jc r ja t j o c t stg o c document number: ds_d1308048 version: j13 - compliant to rohs directive 2011/65/eu and in accordance to weee 2002/96/ec mechanical data case: to-220ac polarity: as marked mbr735 thru mbr7150 taiwan semiconductor schottk y barrier rectifier features mbr 735 mbr 745 mbr 750 mbr 760 mbr 790 to-220ac mbr 7100 mbr 7150 unit maximum repetitive peak reverse voltage maximum rms voltage mounting torque: 5 in-lbs maximum weight: 1.85 g (approximately) maximum ratings and electrical characteristics (t a =25 unless otherwise noted) parameter symbol maximum dc blocking voltage maximum average forward rectified current 7.5 peak repetitive forward current (rated vr, square wave, 20khz) i frm 15 0.72 a peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load i fsm 150 a peak repetitive reverse surge current (note 1) 1 0.5 0.65 0.82 0.84 maximum instantaneous forward voltage (note 2) i f =7.5 a, t j =25 i f =7.5 a, t j =125 i f =15 a, t j =25 i f =15 a, t j =125 v f -- -- maximum reverse current @ rated vr t j =25 t j =125 i r 0.1 v - 0.75 0.92 0.57 ma 15 10 5 voltage rate of change (rated v r ) 10000 note 1: tp = 2.0 s, 1.0khz note 2: pulse test with pw=300 s, 1% duty cycle typical thermal resistance 5 15 o c/w operating junction temperature range - 55 to +150 storage temperature range - 55 to +175
part no. part no. mbr760 mbr760 mbr760 (ta=25 unless otherwise noted) document number: ds_d1308048 version: j13 mbr735 thru mbr7150 taiwan semiconductor ordering information aec-q101 qualified packing code green compound code package packing note 1: "xx" defines voltage from 35v (mbr735) to 150v (mbr7150) example mbr7xx (note 1) prefix "h" c0 suffix "g" to-220ac 50 / tube aec-q101 qualified preferred p/n aec-q101 qualified packing code green compound code description mbr760 c0 c0 ratings and characteristics curves mbr760 c0g c0 g green compound mbr760hc0 h c0 0 2 4 6 8 10 0 50 100 150 average forward a current (a) case temperature ( o c) fig.1- forward current derating curve resistive or inductiveload with heatsink mbr735-mbr745 mbr750-mbr7150 25 50 75 100 125 150 175 1 10 100 peak forward surge current (a) number of cycles at 60 hz fig. 2- maximum non-repetitive forward surge current 8.3ms single half sine wave jedec method 0.001 0.01 0.1 1 10 100 0 20 40 60 80 100 120 140 instantaneous reverse current (ma) percent of rated peak reverse voltage (%) fig. 4- typical reverse characteristics tj=75 tj=125 tj=25 mbr735-745 mbr750-7150 0.01 0.1 1 10 100 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 instantaneous forward current (a) forward voltage (v) fig. 3- typical instantaneous forward characteristics tj=125 pulse width=300 s 1% duty cycle tj=25 mbr735-mbr745 mbr750-mbr760 mbr790-mbr7150
min max min max a - 10.50 - 0.413 b 2.62 3.44 0.103 0.135 c 2.80 4.20 0.110 0.165 d 0.68 0.94 0.027 0.037 e 3.54 4.00 0.139 0.157 f 14.60 16.00 0.575 0.630 g 0.00 1.60 0.000 0.063 h 13.19 14.79 0.519 0.582 i 4.95 5.20 0.195 0.205 j 4.42 4.76 0.174 0.187 k 1.14 1.40 0.045 0.055 l 5.84 6.86 0.230 0.270 m 2.20 2.80 0.087 0.110 n 0.35 0.64 0.014 0.025 p/n = marking code g = green compound yww = date code f = factory code document number: ds_d1308048 version: j13 marking diagram mbr735 thru mbr7150 taiwan semiconductor package outline dimensions dim. unit (mm) unit (inch) 10 100 1000 10000 0.1 1 10 100 junction capacitance (pf) a reverse voltage (v) fig. 5- typical junction capacitance f=1.0mhz vsig=50mvp-p mbr735-mbr745 mbr750-mbr760 mbr790-mbr7150 0.1 1 10 100 0.01 0.1 1 10 100 transient thermal impedance ( /w) t-pulse duration. (sec) fig. 6- typical transient thermal characteristics
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